 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SK3538 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3538 Switching Regulator, DC-DC Converter Applications * * * * Low drain-source ON resistance: RDS (ON) = 75 m (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR (Note 3) Channel temperature Storage temperature range EAR Tch Tstg Rating 500 500 30 8 32 65 312 8 6.5 150 -55 to 150 Unit V V V A W mJ A mJ C C Pulse (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy JEDEC JEITA TOSHIBA SC-97 2-9F1B Weight: 0.74 g (typ.) Thermal Characteristics 4 Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.92 Unit C/W 1 Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 8.3 mH, IAR = 8 A, RG = 25 W Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 2 3 1 2003-02-14 2SK3538 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 8 A Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 10 V 0V 50 W ID = 4 A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 mA, VDS = 0 V VDS = 500 V, VS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 4 A VDS = 10 V, ID = 4 A Min 3/4 30 3/4 500 2.0 3/4 3.5 3/4 3/4 3/4 3/4 VOUT 3/4 3/4 3/4 3/4 3/4 3/4 45 40 140 30 17 13 3/4 pF 3/4 3/4 3/4 3/4 3/4 nC Typ. 3/4 3/4 3/4 3/4 3/4 0.75 7.0 1300 130 400 26 Max 10 3/4 100 3/4 4.0 0.85 3/4 3/4 3/4 3/4 3/4 pF Unit mA V mA V V W S VDD 200 V Duty 1%, tw = 10 ms Source-Drain Diode Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition 3/4 3/4 IDR = 8 A, VGS = 0 V IDR = 8 A, VGS = 0 V, dIDR/dt = 100 A/ms Min 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 1200 10 Max 8 32 -1.7 3/4 3/4 Unit A A V ns mC Marking Lot Number K3538 Type Month Year (starting from alphabet A) (last number of the christian era) RL = 50 W 2 2003-02-14 2SK3538 ID - VDS 10 Common source Tc = 25C Pulse test 6 15 10 20 5.25 5 16 ID - VDS 6 10 5.5 15 12 5 8 Common source Tc = 25C Pulse test 8 (A) ID 6 4.75 Drain current 4 4.5 4.25 VGS = 4 V Drain current ID (A) 2 4 4.5 VGS = 4 V 0 0 2 4 6 8 10 0 0 10 20 30 40 50 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 20 Common source VDS = 20 V Pulse test 10 VDS - VGS Common source Tc = 25C Pulse test 16 (V) 8 (A) ID Drain-source voltage 12 VDS 6 Drain current ID = 8 A 8 Tc = -55C 4 100 0 0 2 4 25 4 4 2 2 0 0 6 8 10 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID (S) 30 Common source Tc = -55C VDS = 20 V Pulse test 10 100 5 3 25 3 Common source Tc = 25C Pulse test 1 RDS (ON) - ID iYfsi Forward transfer admittance Drain-source on resistance RDS (ON) (W) 0.5 0.3 VGS = 10, 15 V 1 0.1 0.5 0.3 1 3 10 30 0.05 0.3 1 3 10 30 Drain current ID (A) Drain current ID (A) 3 2003-02-14 2SK3538 RDS (ON) - Tc (W) 5 Common source 30 Common source Tc = 25C IDR - VDS RDS (ON) (A) Drain reverse current IDR 4 VGS = 10 V Pulse test 10 Pulse test Drain-source on resistance 3 3 2 4 1 ID = 8 A 1 2 10 0.3 5 3 1 VGS = 0, -1 V -0.8 -1.0 -1.2 0 -80 -40 0 40 80 120 160 0.1 0 -0.2 -0.4 -0.6 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 5000 3000 5 Vth - Tc Common source VDS = 10 V ID = 1 mA Pulse test Gate threshold voltage Vth (V) 4 1000 Ciss (pF) 500 300 Coss 3 Capacitance C 100 50 Common source 30 V GS = 0 V f = 1 MHz Tc = 25C 10 0.1 1 2 Crss 1 10 100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 100 Common source VDS = 10 A ID = 1 mA Pulse test 60 500 Dynamic input/output characteristics Common source ID = 8 A Tc = 25C Pulse test 20 (W) (V) 80 400 16 Drain-power dissipation PD VDS Drain-source voltage 200 200 400 8 40 20 100 VGS 4 0 0 25 50 75 100 125 150 0 0 10 20 30 40 0 50 Case temperature Tc (C) Total gate charge Qg (nC) 4 2003-02-14 Gate-source voltage 300 VDD = 100 V 12 VGS (V) VDS 2SK3538 rth - tw 3 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM t Single pulse T Duty = t/T Rth (ch-c) = 1.92C/W 100 m 1m 10 m 100 m 1 10 0.03 0.003 10 m Pulse width tw (S) Safe operating area 100 ID max (pulsed)* 100 ms* 500 EAS - Tch (mJ) Avalanche energy EAS 1 ms* 400 10 ID max (continuous) 300 (A) ID 200 Drain current 1 DC operation Tc = 25C 100 0 25 0.1 * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.01 1 10 VDSS max 100 1000 50 75 100 125 150 Channel temperature (initial) Tch (C) 15 V -15 V BVDSS IAR VDD VDS Waveform AS = ae o 1 B VDSS / x L x I2 x c cB 2 - VDD / e VDSS o Drain-source voltage VDS (V) Test circuit RG = 25 W VDD = 90 V, L = 8.3 mH 5 2003-02-14 2SK3538 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2003-02-14 |
Price & Availability of 2SK3538
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |